An IC-level Countermeasure against Laser Fault Injection Attack by Information Leakage Sensing Based on Laser-Induced Opto-Electric Bulk Current Density
- K. Matsuda, S. Tada, M. Nagata, Y. Komano, Y. Li, T. Sugawara, M. Iwamoto, K. Ohta, K. Sakiyama, and N. Miura
- Japanese Journal of Applied Physics
Laser fault injection (LFI) attacks on cryptographic processor ICs are a critical threat to information systems. This paper proposes an IC-level integrated countermeasure employing an information leakage sensor against an LFI attack. Distributed bulk current sensors monitor abnormal bulk current density caused by laser irradiation for LFI. Time-interleaved sensor operation and sensitivity tuning can obtain partial secret key leakage bit information with small layout area penalty. Based on the leakage information, the secret key can be securely updated to realize high-availability resilient systems. The test chip was designed and fabricated in a 0.18 μm standard CMOS, integrating a 128-bit advanced encryption standard cryptographic processor with the proposed information leakage sensor. This evaluation successfully demonstrated bulk current density and leakage bit monitoring.